Product Details
A tungsten sputtering target is a material used in physical vapor deposition (PVD) technology, primarily for thin film deposition processes. It is made of high-purity tungsten and is typically used to deposit tungsten atoms onto the surface of a substrate by sputtering in a vacuum environment to form a thin film.
Due to its good electrical conductivity, tungsten helps to increase the efficiency of the deposition process.
In addition the wear resistance of tungsten targets allows them to withstand the impact of energetic particles during sputtering. In the semiconductor industry it is used to manufacture devices such as integrated circuits and thin film transistors. In the optoelectronics industry for the manufacture of optical coatings and thin-film solar cells. In the field of display technology, in liquid crystal displays (LCDs) and thin-film electroluminescent displays (OLEDs).
Finally in hard coatings: for the manufacture of coatings with high hardness and wear resistance.
The following are the steps and precautions for using tungsten sputtering targets：
1. Preparation
Equipment Inspection: Check that the sputtering equipment (e.g. DC sputtering or RF sputtering system) is in good condition and carry out necessary cleaning and maintenance.
Target installation: Install the tungsten target on the target holder and make good contact with the target electrode to ensure effective electrical connection.
2. Vacuum environment
Vacuuming: Start the vacuum pump to reduce the air pressure inside the reaction chamber to the required vacuum level. Typically, a working vacuum of between 10^-2 and 10^-6 Torr is required.
Inert gas introduction: Inert gas (e.g. argon) is introduced into the reaction chamber for use as a gaseous medium in the sputtering process.
3. Sputtering process
Applied Voltage: A suitable voltage is applied to the target to create an electric arc to excite the target surface. The choice of voltage usually depends on the equipment used and the properties of the material to be deposited.
Sputtering of the target: Energetic particles (e.g. noble gas ions) strike the target surface, causing tungsten atoms to escape from the target surface and forming a thin film of tungsten.
4. Thin film deposition
Substrate Placement: The substrate to be deposited (e.g. silicon wafer, glass, etc.) is placed on the opposite side of the target.
Thin film growth: Tungsten atoms are deposited on the surface of the substrate to form a tungsten thin film. The thickness and quality of the film can be controlled by adjusting parameters such as deposition time, gas flow and power.
5. Finishing and cleaning
Stop sputtering: After reaching the desired film thickness, turn off the power and stop the inflow of inert gas.
Cooling and Removal: After the equipment and substrate have cooled down, remove the deposited substrate and check the quality of the film.
Target Maintenance: Regularly check the wear of the target and replace it if necessary to ensure the continued stability of the deposition process.
